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| FDZ493P P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET November 2006 FDZ493P P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET -20V, -4.6A, 46m Features Max rDS(on) = 46m at VGS = -4.5V, ID = -4.6A Max rDS(on) = 72m at VGS = -2.5V, ID = -3.6A Occupies only 2.25 mm2 of PCB area. Less than 50% of the area of SSOT-6. Ultra-thin package: less than 0.80 mm height when mounted to PCB. Outstanding thermal transfer characteristics:4 times better than SSOT-6. Ultra-low Qg x rDS(on) figure-of-merit. RoHS Compliant. tm General Description Combining Fairchild's advanced 2.5V specified PowerTrench(R) process with state of the art BGA packaging process, the FDZ493P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handing capability,ultra-low profile packaging, low gate charge, and low rDS(on). Application Battery management Load switch Battery protection S GATE G D BOTTOM TOP MOSFET Maximum Ratings TA = 25C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation TA = 25C (Note 1a) Operating and Storage Junction Temperature Range TA = 25C (Note 1a) Ratings -20 12 -4.6 -10 1.7 -55 to +150 Units V V A W C Thermal Characteristics RJA Thermal Resistance, Junction to Ambient (Note 1a) 72 C/W Package Marking and Ordering Information Device Marking E Device FDZ493P Reel Size 7'' Tape Width 8mm Quantity 3000 units (c)2006 Fairchild Semiconductor Corporation FDZ493P Rev.B(W) 1 www.fairchildsemi.com FDZ493P P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET Electrical Characteristics TA = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V -20 -13 -1 100 V mV/C A nA On Characteristics (note 2) VGS(th) VGS(th) TJ rDS(on) ID(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Drain to Source On Resistance On to State Drain Current Forward Transconductance VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -4.5V, ID = -4.6A VGS = -2.5V, ID = -3.6A VGS = -4.5V, ID = -4.6A,TJ=125C VGS = -4.5V, VDS = -5V VDS = -5V, ID = -4.6A -10 13 -0.6 -0.8 3 36 58 47 46 72 65 A S m -1.5 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -10V, VGS = 0V, f = 1MHz f = 1MHz 754 167 92 6 pF pF pF Switching Characteristics (note 2) td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge at 10V Gate to Source Gate Charge Gate to Drain "Miller" Charge VDS = -10V ,ID = -4.6A VGS = -4.5V VDD = -10V, ID = -1A VGS = -4.5V, RGEN = 6 11 10 22 17 7.5 1.5 2.0 20 20 35 31 11 ns ns ns ns nC nC nC Drain-Source Diode Characteristics IS VSD trr Qrr Maximum continuous Drain-Source Diode Forward Current Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -1.4A (Note 2) -0.7 17 5 -1.4 -1.2 A V ns nC IF = -4.6A, di/dt = 100A/s Notes: 1: RJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RJB is defined for reference. For RJC the thermal reference point for the case is defined as the top surface of the copper chip carrier. RJC and RJB are guaranteed by design while RJA is determined by the user's board design. a. 72C/W when mounted on a 1 in2 pad of 2 oz copper,1.5" X 1.5" X 0.062" thick PCB b. 157C/W when mounted on a minimum pad of 2 oz copper 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. FDZ493P Rev.B(W) 2 www.fairchildsemi.com FDZ493P P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 DRAIN TO SOURCE ON-RESISTANCE 2.6 VGS = -2.5V VGS = -3.0V VGS = -3.5V VGS = -2.0V PULSE DURATION = 300s DUTY CYCLE = 2%MAX -ID, DRAIN CURRENT (A) 8 6 VGS = -2.0V rDS(ON), NORMALIZED 2.2 1.8 1.4 1.0 0.6 VGS = -2.5V VGS = -3.0V VGS = - 3.5V VGS = -4.5V VGS = -4.5V 4 2 0 0.0 PULSE DURATION = 300s DUTY CYCLE = 2%MAX 0.5 1.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.5 0 2 4 6 -ID, DRAIN CURRENT(A) 8 10 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 200 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) DRAIN TO SOURCE ON-RESISTANCE 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID = -4.6A VGS = -4.5V ID = -2.3A PULSE DURATION = 300s DUTY CYCLE = 2%MAX rDS(ON),NORMALIZED 150 100 TJ = 125oC 50 TJ = 25oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 3. Normalized On Resistance vs Junction Temperature 10 PULSE DURATION = 300s DUTY CYCLE = 2%MAX Figure 4. On-Resistance vs Gate to Source Voltage 10 VGS = 0V -ID, DRAIN CURRENT (A) 8 6 4 TJ = 125oC TJ = 25oC TJ = -55oC -IS, REVERSE DRAIN CURRENT (A) 1 0.1 0.01 1E-3 1E-4 0.0 TJ = 125oC TJ = 25oC 2 0 0.5 TJ = -55oC VDS=-5V 1.0 1.5 2.0 -VGS, GATE TO SOURCE VOLTAGE (V) 2.5 0.2 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDZ493P Rev.B(W) 3 www.fairchildsemi.com FDZ493P P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 5 4 3 2 1 0 VDD = -10V 2000 1000 CAPACITANCE (pF) Ciss VDD = -5V VDD = -15V Coss Crss 100 f = 1MHz VGS = 0V 0 2 4 6 Qg, GATE CHARGE(nC) 8 10 40 0.1 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 30 VGS = -4.5V TA = 25oC rDS(on) LIMIT P(PK), PEAK TRANSIENT POWER (W) 50 -ID, DRAIN CURRENT (A) 10 100us 1ms 25 20 15 10 5 0 -2 10 SINGLE PULSE O Rthja = 157 C/W FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - T A ----------------------125 1 10ms 100ms 0.1 VGS = -4.5V SINGLE PULSE Rthja = 157OC/W TA = 25OC 1s 10s DC 0.01 0.1 1 10 -VDS, DRAIN to SOURCE VOLTAGE (V) 50 10 -1 10 10 t, PULSE WIDTH (s) 0 1 10 2 10 3 Figure 9. Forward Bias Safe Operating Area 1 DUTY CYCLE-DESCENDING ORDER Figure 10. Single Pulse Maximum Power Dissipation NORMALIZED THERMAL IMPEDANCE, ZJC 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA SINGLE PULSE 1E-3 -4 10 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 t, RECTANGULAR PULSE DURATION (s) Figure 11. Transient Thermal Response Curve FDZ493P Rev.B(W) 4 www.fairchildsemi.com FDZ493P P-Channel 2.5V Specified PowerTrench(R) BGA MOSFET Dimensional Pad and Layout FDZ493P Rev.B(W) 5 www.fairchildsemi.com FAIRCHILD SEMICONDUCTOR TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHC(R) UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production Rev. I21 |
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